Power Device Wafer/Bare die -
SiC MOSFET Bare Die is the result of the Actron Group's semiconductor vertical integration capabilities, which leverages its own professional chip design department and collaborates with upstream substrate manufacturing/epitaxial growth/Fab from the group to develop SiC MOSFET power device wafers/bare die. The highly versatile and output-stable product combination is suitable for various discrete power devices and power modules.
| Model No. | Voltage | Current | Wafer Size | Packaging | FSM | BSM |
| SiC_TBD | 1200V | - | 4" or 6" | Unsawn wafer Sawn wafer on frame Chip on tray Tape & Reel | Al AlCu Solderable | Ti/Ni/Ag Ti/NiV/Ag Ti/Ni/Au |
| SiC_TBD | 1700V | - | 4" or 6" | Unsawn wafer Sawn wafer on frame Chip on tray Tape & Reel | Al AlCu Solderable | Ti/Ni/Ag Ti/NiV/Ag Ti/Ni/Au |
_Long_tab_B.png)
_A.png)