Power Device Wafer/Bare die -
Si FRD Bare Die
Main Features
- Low energy loss
- Cost effective
- Pairable with Si-IGBT
- Automotive/Industrial applications
- PPAP available
Product info
Si FRD Bare Die is the result of the Actron Group's semiconductor vertical integration capabilities, which leverages its own professional chip design department and collaborates with upstream substrate manufacturing/epitaxial growth/Fab from the group to develop Si FRD power device wafers/bare die. The highly versatile and output-stable product combination is suitable for various discrete power devices and power modules.
| Model No. | Voltage | Current | Wafer Size | Packaging | FSM | BSM |
| Si_TBD | 650V | - | 6" or 8" | Unsawn wafer Sawn wafer on frame Chip on tray Tape & Reel | Al AlCu Solderable | Ti/Ni/Ag Ti/NiV/Ag Ti/Ni/Au |
| Si_TBD | 750V | - | 6" or 8" | Unsawn wafer Sawn wafer on frame Chip on tray Tape & Reel | Al AlCu Solderable | Ti/Ni/Ag Ti/NiV/Ag Ti/Ni/Au |
| Si_TBD | 1200V | - | 6" or 8" | Unsawn wafer Sawn wafer on frame Chip on tray Tape & Reel | Al AlCu Solderable | Ti/Ni/Ag Ti/NiV/Ag Ti/Ni/Au |
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