High Performance Automotive Pressfit Diodes
Power Module
Power Discrete
Power Device Wafer/Bare die
IR
TO220-2.png

Power Discrete -

1200V 10A SiC Diode Discrete (AAC010B12DC)

Main Features
  • Standard TO-220-2 package
  • Voltage: 1200V Current: 10A
  • SiC Schottky Barrier Diode inside
  • Low conduction loss
  • High Temperature capabilities (<175C)
  • Low Stray inductance
  • AEC-Q101 & PPAP Available
Datasheet Download Ask for Quotation

Product info

Model No. Voltage Current ID/IC Type of Encaputaltion VF Qg Certification
AAC006H06DC 650 6 TO-220-2 1.3 15 Industrial
AEC006H06DC 650 6 TO-252-2 1.35 15 industrial
AAC008H06DC 650 8 TO-220-2 1.3 18 Industrial
AAC010H06DC 650 10 TO-220-2 1.3 22 Industrial
AGC010H06DC 650 10 QFN8*8 1.35 24 Industrial
AAC012H06DC 650 12 TO-220-2 Industrial
AAC016H06DC 650 16 TO-220-2 Industrial
ACC016H06DC 650 16 TO-247-3 1.35 42 industrial
AAC020H06DC 650 20 TO-220-2 1.3 47 industrial
ACC020H06DC 650 20 TO-247-3 1.3 47 industrial
AAC030H06DC 650 30 TO-220-2 -- -- Industrial
ACC030H06DC 650 30 TO-247-3 -- -- Industrial
ACC040H06DC 650 40 TO-247-3 Industrial
ABC020B12DC 1200 20 TO-247-2 Industrial
ABC030B12DC 1200 30 TO-247-2 Industrial

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